RB218T150NZ Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB218T150NZ
lApplication
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low I_R
lDimensions (Unit : mm)
4.5±^00..31
10.0±^00..31
f3.2±0.2
2.8±^00..21
1
1.2
1.3
0.8
2.6±0.5
lConstruction
Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±_00..015
ROHM : TO220FN
1 _{: Manufacture date}
Data Sheet
lStructure
(1)
(2)
(3)
Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7
540
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Storage temperature
T_stg
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
V_F
I_R
R_th(j-c)
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
I_O/2 per diode, T_c=115ºC Max.
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle, per diode
-
-
Limits Unit
150
V
150
V
20
A
100
A
150
°C
-55 to +150 °C
Conditions
I_F=10A
V_R=150V
Junction to case
Min. Typ. Max. Unit
-
- 0.88 V
-
- 20 mA
-
-
2 °C/W
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2016.09 - Rev.A