RB218T100NZ Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB218T100NZ
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low I_R
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±^00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±^00..21
lStructure
1
1.2
1.3
0.8
(1) (2) (3)
Anode Cathode Anode
2.6±0.5
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±_00..015
ROHM : TO220FN
1 : Manufacture Date
lPackage Dimensions (Unit : mm)
7
540
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
110
V
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Direct reverse voltage
60Hz half sin wave, resistive load,
T_c=115ºC Max., I_O/2 per diode
60Hz half sin wave, Non-repetitive at
T_a=25ºC, 1cycle, per diode
-
100
V
20
A
100
A
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical and Thermal Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=10A
-
- 0.87 V
Reverse current
I_R
V_R=100V
-
-
7 mA
Thermal resistance
R_th(j-c)
Junction to case
-
-
2 °C/W
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2016.09 - Rev.A