RB218NS150 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB218NS150
Data Sheet
lApplications
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low I_R
lDimensions (Unit : mm)
(2)
RB218
NS150
1
(1)
(3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
2.54
TO-263S
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
①1 _{: Manufacture date}
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
150
V
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Direct reverse voltage
60Hz half sin wave, resistive load,
I_O/2 per diode, T_c=115ºC Max.
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle, per diode
-
150
V
20
A
100
A
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical and Thermal Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=10A
-
- 0.88 V
Reverse current
I_R
V_R=150V
-
- 20 mA
Thermal resistance
R_th(j-c)
Junction to case
-
-
2 °C/W
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2016.01 - Rev.A