RB215T-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB215T-40
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common dual type.(TO-220)
2) Low IR
3) High reliability
215
4
Construction
Silicon epitaxial planar
Data Sheet
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
V_RM
45
V
V_R
40
V
Io
20
A
Forward current surge peak (60Hz/1cyc) (*1)
I_FSM
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
40 to 150
C
(*1)Business frequencies, 1/2 Io per diode, Tc=121C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
V_F
I_R
jc
Min. Typ. Max.
-
- 0.55
-
- 500
-
- 1.75
Unit
V
μA
C/W
Conditions
I_F=10A
V_R=40V
junction to case
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.E