RB205T-40_10 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB205T-40
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low I_R
3) High reliability
205
4
Construction
Silicon epitaxial planer
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
V_RM
45
V_R
40
Io
15
Forward current surge peak (60Hz / 1cyc) (*1)
I_FSM
100
Junction temperature
Tj
150
Storage temperature
Tstg
-40 to +150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
V_F
-
-
0.55
I_R
-
-
300
jc
-
-
2
Unit
V
V
A
A
C
C
Unit
V
A
C/W
Conditions
I_F=7.5A
V_R=40V
junction to case
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2010.02 - Rev.D