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| RB168VAM-60 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RB168VAM-60
Data Sheet
lApplication
General rectification
lFeatures
1) Small mold type
(TUMD2M)
2) High reliability
3) Super low IR
lDimensions (Unit : mm)
1.4±0.1
0.8±0.05
0.17
+0.10
-0.05
1.0±0.10
0.60
+0.20
-0.10
lLand Size Figure (Unit : mm)
1.1
(1)
(2)
ROHM : TUMD2M
: Manufacture date and factory
0~0.1
TUMD2M
lStructure (1)Cathode
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
4.0±0.1
2.0±0.05
4.0±0.1
Φ1.5
+0.1
-0
(2) Anode
0.25±0.05
1.53±0.03
Φ1.0+-00.2
0.9±0.08
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Dutyâ¦0.5
60
V
Reverse Voltage
VR
Direct Reverse Voltage
60
V
Average Forward Rectified Current
Io
Glass epoxy board mounted, 60Hz half sin Wave,
resistive load, Tc=100°C Max.
1
A
Non-repetitive Forward Current Surge Peak IFSM
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
5
A
Operating Junction Temperature
Tj
-
150
°C
Storage Temperature
Tstg
-
-55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=1A
VR=60V
Min. Typ. Max. Unit
-
- 0.82 V
-
- 1.0 mA
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.01 - Rev.A
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