RB168MM100 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB168MM100
Datasheet
Application
General rectification
Dimensions (Unit : mm)
Land Size Figure (Unit : mm)
1.2
1.6±0.1
0.1±_00..015
Features
1) Small power mold type
(PMDU)
2) High reliability
3) Super low I_R
Construction
Silicon epitaxial planar type
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
PMDU
Structure
Cathode
Taping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.05
Anode
0.25±0.05
1.81±0.1
4.0±0.1
φ 1.0±0.1
1.5MAX
Absolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
100
V
Reverse voltage
V_R
Direct reverse voltage
100
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , T_c=115ºC Max.
1
A
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, one cycle,
non-repetitive at T_a=25ºC
40
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
55 to 150 °C
Electrical Characteristics (T_j= 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Conditions
I_F=1.0A
V_R=100V
Min. Typ. Max. Unit
-
- 0.81 V
-
- 0.4 A
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2016.11 - Rev.E