RB168M-40TR Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB168M-40
lApplications
General rectification
lDimensions (Unit : mm)
1.6±0.1
0.1±0.1
　　　 0.05
lLand size figure (Unit : mm)
1.2
lFeatures
1)Small power mold type. (PMDU)
2)Low I_R
3)High reliability
4)AEC-Q101 qualified
lConstruction
Silicon epitaxial
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
PMDU
lStructure
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
φ 1.0±0.1
1.5MAX
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current (*1)
Io
1
A
Forward current surge peak (60Hz・1cyc)
I_FSM
30
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
(*1)Mounted on epoxy board. 180°Half sine wave
lElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Typ.
0.60
0.05
Max.
0.65
0.55
Unit
Conditions
V
I_F=1.0A
μA
V_R=40V
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2012.08 - Rev.B