RB168L150 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB168L150
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Super low I_R
lConstruction
Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
lStructure
φf11..555±00..0055
Cathode
Anode
0.3
2.9±0.1
4.0±0.1
φf11..555
2.8MAX
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
150
V
Reverse voltage
V_R
Direct reverse voltage
150
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, T_c=125ºC Max.
1
A
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, one cycle,
non-repetitive at T_a=25ºC
30
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
V_F
I_F=1.0A
-
- 0.84 V
I_R
V_R=150V
-
- 4.0 mA
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2015.01 - Rev.A