RB168L-30 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB168L-30
Application
General rectification
Dimensions (Unit : mm)
2.6±0.15
Datasheet
Land Size Figure (Unit : mm)
2.0
Features
1) Small power mold type
(PMDS)
2) High reliability
3) Super low I_R
Construction
Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
Structure
φ11..5555±00..0055
Cathode
Anode
0.3
2.9±0.1
4.0±0.1
φ11..5555
2.8MAX
Absolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
30
V
Reverse voltage
V_R
Direct reverse voltage
30
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, T_c=125ºC Max.
1
A
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, 1cycle,
non-repetitive at T_a=25ºC
30
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
55 to 150 °C
Electrical Characteristics (T_j= 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Conditions
I_F=1A
V_R=30V
Min. Typ. Max. Unit
-
- 0.69 V
-
- 0.6 A
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2016.11 - Rev.B