RB162M-30TF Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB162M-30
lApplications
General rectification
lFeatures
1)Small power mold type.(PMDU)
2)High reliability
lExternal Dimensions(Unit : mm)
1.6±0.1
0.1±0.1
　　　 0.05
lLand Size Figure(Unit : mm)
1.2
lConstruction
Silicon epitaxial
PMDU
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
lStructure
lTaping Dimensions(Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
φ 1.0±0.1
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
30
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current (*1)
Io
1
A
Forward current surge peak (60Hz・1cyc)
I_FSM
30
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
(*1)Mounting on epoxi board. 180°Half sine wave
lElectrical Characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Forward voltage
Reverse current
V_F1
-
0.44 0.52
V
I_R
-
10 100
mA
1.5MAX
Conditions
I_F=1.0A
V_R=30V
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2012.08 - Rev.A