RB161SS-30 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB161SS-30
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand Size Figure (Unit : mm)
0.8
lFeatures
1) Small power mold type
(KMD2)
2) High reliability
3) Super low V_F
lConstruction
Silicon epitaxial planar type
0～0.03
0.8±0.05
0.6±0.03
ROHM : KMD2
JEDEC : -
JEITA : -
: Dot (Year, week, factory)
0.7±0.05
lTaping Dimensions (Unit : mm)
KMD2
lStructure
(1) Cathode
(2) Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
40
V
Reverse voltage
V_R
Direct reverse voltage
30
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
1
A
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle
5
A
Operating junction temperature
T_j
-
125
°C
Storage temperature
T_stg
-
-55 to +125 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
V_F1
I_F=0.7A
-
- 0.47 V
V_F2
I_F=1.0A
-
- 0.52 V
I_R1
V_R=10V
-
- 200 mA
I_R2
V_R=30V
-
- 500 mA
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2015.10 - Rev.A