RB161L-40TE25 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB161L-40
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Small power mold type（. PMDS）
2)Low V_F
3)High reliability
2.6±0.2
33
①②
0.1±0.02
　　　 0.1
Construction
Silicon epitaxial planar
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
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Land size figure (Unit : mm)
2.0
PMDS
Structure
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
40
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current
Io
1
A
Forward current surge peak (60Hz・1cyc)
I_FSM
70
A
Junction temperature
Tj
125
C
Storage temperature
Tstg
40 to 125
C
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristic(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.40
I_R
-
-
1
Unit
V
I_F=1.0A
mA
V_R=20V
Conditions
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2011.04 - Rev.H