RB160VA-40FH Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diodes

Schottky Barrier Diodes
RB160VA-40FH
Applications
General rectification
Features
1) Small mold type. (TUMD2)
2) Low V_F, Low I_R.
3) High reliability.
Dimensions (Unit : mm)
1.3±0.05
0.1 7±0.1
　　 0.05
Construction
Silicon epitaxial planar
0.8±0 .05
ROHM : TUMD2
0.6±0 .2
　　　 0.1
dot (year week factory) + day
AEC-Q101 Qualified
 Land size figure (Unit : mm)
1.1
TUMD2
Structure
 Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0.05
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current
Io
1
A
Forward current surge peak （60Hz・1cyc） I_FSM
5
A
Forward current surge peak（t=100μs・1cyc） I_FSM
10
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Forward voltage
V_F
-
0.50
Reverse current
I_R
-
1.5
Max.
0.55
50
Unit
Conditions
V I_F=700mA
μA VR=40V
0.9±0.08
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2010.06 - Rev.D