RB160SS-40T2R Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB160SS-40
lApplications
Small current rectification
lDimensions (Unit : mm)
lFeatures
1)Small power mold type (KMD2)
2)High reliability
3)Low I_R
0.8±0.05
0～0.03
0.6±0.03
lConstruction
Silicon epitaxial planer
ROHM : KMD2
JEDEC :-
JEITA : -
dot (year week factory)
0.7±0.05
lTaping dimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
0.8
KMD2
lStructure
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) V_RM
40
Reverse voltage (DC)
V_R
40
Average rectified forward current (*1)
Io
1
Forward current surge peak(60Hzï½¥1cyc.)
I_FSM
5
Junction temperature
Tj
150
Storage temperature
Tstg
-40 to +150
(*1) On the Glass epoxy substrate , 180°Half Sine wave
lElectrical characteristics (Ta=25C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F
-
IR
-
Typ.
Max.
0.50
0.55
3.00 50.00
Unit
V
V
A
A
C
C
Unit
V
μA
Conditions
IF=0.7A
VR=40V
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2011.10 - Rev.A