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| RB160M-90_2 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Diodes
Schottky barrier diode
RB160M-90
RB160M-90
zApplications
General rectification
zDimensions (Unit : mm)
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ãª
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ãªã«§ãªãª
ãª
äääã©·ãªãª
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z Land size figure (Unit : mm)
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ãª
zFeatures
1) Small power mold type. (PMDU)
2) Low IR
3) High reliability.
㪧㪤ãªãª¬
zConstruction
Silicon epitaxial planar
zStructure
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ãªã«§ãªãª
ãª
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㪡ãªãªãªãªã©·ãªãªª 㪦 ãªãª 㪠㪠ãª
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㫠㪽㪸㪺 㫠㫠㫠㪼 ã©·ãªãª¸ã« 㪼
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ãªã«§ãªãª
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z Taping specifications (Unit : mm)
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ãªã«§ãªãª
㪠ãªãª
ãªã«§ãªãª
ãªãª
ã±¢ãªãª
ãªãªã«§ãªãª
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ãªãª
ãªãªã«§ãªãª
ãªãª
ãªãª
ãªãªã«§ãªãª
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zAbsolute maximum ratings (Ta=25qC)
Param eter
Revers e voltage (repetitive peak)
Revers e voltagec(DC)
Average rectified forward current
Forward current s urge peak ä¨60Hzä¶1cycä©
Junction tem perature
Storage tem perature
Mounted on epoxy board. 180Í¥Harf s ine wave
Sym bol
VRM
VR
Io
IFSM
Tj
Ts tg
ãªãª
ãªã«§ãªãª
ãª
ã±¢ãªãª
ãªã«§ãªãª
ãª
Lim its
Unit
90
V
90
V
1
A
30
A
150
ã·
-40 to +150
ã·
ãªãª
ãªãª¤ãªãª¯
zElectrical characteristics (Ta=25qC)
Param eter
Forward voltage
Revers e current
Sym bol
Min.
Typ. Max.
VF
-
-
0.73
IR
-
-
100
Unit
V
IF=1.0A
μA
VR=90V
C o n d i ti o n s
Rev.C
1/3
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