RB160M-60 Datasheet, PDF (1/3 Pages) Rohm – Shottky barrier diode

Diodes
Shottky barrier diode
RB160M-60
RB160M-60
!Application
General rectification.
!Features
1) Small power mold type (PMDU).
2) High reliability.
3) Low IR.
!Structure
Silicon Epitaxial Planer
!External dimensions (Unit : mm)
0.9±0.1
ROHM :
EIAJ : −
JEDEC :
1.6±0.1
0.80±0.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current
IO
Forward current surge peak (60Hz / 1cyc.)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
∗Glass epoxy substrate at the time of assembler, half sine wave at 180.
Limits
60
60
1.0
30
150
−40 to 150
Unit
V
V
A
∗
A
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
Min.
Typ.
Max.
Unit
VF1
−
0.54
0.58
V
IR
−
3.0
30
µA
Conditions
IF=1.0A
VR=60V
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