RB160M-30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB160M-30
RB160M-30
zApplications
General rectification
zFeatures
1) Small power mold type. (PMDU)
2) Low I_R.
3) High reliability.
zConstruction
Silicon epitaxial planar
z Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
　　　 0.05
z Land size figure (Unit : mm)
1.2
PMDU
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
zStructure
0.25±0.05
1.81±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak (60Hz・1cyc) I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
4.0±0.1
φ1.0±0.1
Limits
30
30
1
30
125
-40 to +125
1.5MAX
Unit
V
V
A
A
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F1
-
V_F2
-
I_R1
-
I_R2
-
Typ.
0.39
0.43
3.0
9.0
Max.
0.46
0.48
20
50
Unit
Conditions
V I_F=0.5A
V I_F=1.0A
µA V_R=15V
µA V_R=30V
Rev.C
1/3