RB160L-90_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB160L-90
Applications
General rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.0
Features
1)Small power mold type.（PMDS）
2) Low I_R.
3)High reliability
Construction
Silicon epitaxial planer
2.6±0.2
46
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
95
V
Reverse voltage (DC)
V_R
90
V
Average rectified forward current
Io
1
A
Forward current surge peak (60Hz・1cyc)
I_FSM
30
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
40 to 150
C
(*1)Mounting on epoxy board. 180°Half sine wave
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.73
I_R
-
-
100
Unit
Conditions
V
I_F=1.0A
μA
V_R=90V
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2011.04 - Rev.A