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RB160L-90TE25 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode | |||
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Data Sheet
Schottky Barrier Diode
RB160L-90
ï¬Applications
General rectification
ï¬Dimensions (Unit : mm)
ï¬Land size figure (Unit : mm)
2.0
ï¬Features
1)Small power mold type.ï¼PMDSï¼
2) Low IR.
3)High reliability
ï¬Construction
Silicon epitaxial planer
2.6±0.2
46
â â¡
1.5±0.2
0.1±0.02
ããã 0.1
2.0±0.2
PMDS
ï¬Structure
ROHM : PMDS
JEDEC : SOD-106
â â¡ Manufacture Date
ï¬Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
Ï1.55±0.05
0.3
2.9±0.1
4.0±0.1
Ï1.55
2.8MAX
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
95
V
Reverse voltage (DC)
VR
90
V
Average rectified forward current
Io
1
A
Forward current surge peak (60Hzã»1cyc)
IFSM
30
A
Junction temperature
Tj
150
ï°C
Storage temperature
Tstg
ï40 to ï«150
ï°C
(*1)Mounting on epoxy board. 180°Half sine wave
ï¬Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF
-
-
0.73
IR
-
-
100
Unit
Conditions
V
IF=1.0A
μA
VR=90V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A
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