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RB160L-60TE25 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Data Sheet
Schottky barrier diode
RB160L-60
ï¬Applications
General rectification
ï¬Dimensions (Unit : mm)
ï¬Features
1) Small power mold type. (PMDS)
2) Low IR.
3) High reliability
ï¬Construction
Silicon epitaxial planar
2.6±0.2
44
â â¡
1.5 ±0.2
0.1±0.02
ããã 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
â â¡ Manufacture Date
ï¬Land size figure (Unit : mm)
2.0
PMDS
ï¬Structure
ï¬Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
Ï1.55±0.05
0.3
2.9±0.1
4.0±0.1
Ï1.55
2.8MAX
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz/1cyc) IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Mounted on epoxy board. 180°Half sine wave
Limits
60
60
1
30
150
ï40 to ï«125
ï¬Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
- 0.58
Reverse current
IR
-
-
1
Unit
V
V
A
A
ï°C
ï°C
Unit
Conditions
V
IF=1.0A
mA VR=60V
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1/3
2011.04 - Rev.D
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