RB160L-40_15 Datasheet, PDF (1/7 Pages) Rohm – Schottky barrier diode

Data Sheet
Schottky barrier diode
RB160L-40
Applications
General rectification
Dimensions (Unit : mm)
Features
1) Small power mold type. (PMDS)
2) Low I_R.
3) High reliability
Construction
Silicon epitaxial planer
2.6±0.2
34
①②
1.5 ±0.2
0.1±0.02
　　　 0.1
2.0±0.2
Land size figure (Unit : mm)
2.0
PMDS
Structure
ROHM : PMDS
JEDEC : SOD-106
① ② _{Manufacture Date}
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak (60Hz / 1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Tc=90°C max Mounted on epoxy board. 180° Half sine wave
Limits
40
40
1
70
150
40 to 150
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
- 0.55
I_R1
-
-
10
I_R2
-
-
100
Unit
V
V
A
A
C
C
Unit
Conditions
V
I_F=1.0A
A
V_R=6V
A
V_R=40V
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2011.04 - Rev.B