RB160A60_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB160A60
RB160A60
zApplications
General rectification
zFeatures
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low VF.
4) High ESD.
zConstruction
Silicon epitaxial planar
zDimensions (Unit : mm)
CATHODE　BAND
φ0.6±0.1
29±1
3.0±0.2
ROHM : MSR
①
②
Manufacture Date
zTaping specifications (Unit : mm)
H2
A
BLUE
E
L1
H1
L2
F
29±1
φ2.5±0.2
BROWN
Symbol
Standard dimension
value(mm)
T-31 　 52.4±1.5
Ａ
+0.4
T-32 26.0 ₀
B
B ^{T-31 　 5.0±0.5}
T-31 5.0±0.3
C ^T-31 1.0 max.
C
T-32
D ^T-31
0
T-32
E ^{T-31 1/2A±1.2}
T-32 1/2A±0.4
Ｆ ^{T-31 ±0.7}
T-32 0.2 max.
H1 ^T-31 6.0±0.5
T-32
H2 ^T-31 5.0±0.5
T-32
D
|L1-L2| ^{T-31 1.5 max.}
T-32 0.4 max.
＊H1(6mm)：BROWN
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
60
V
Reverse voltage (DC)
V_R
60
V
Average rectified forward current (*1)
Io
1
A
Forward current surge peak （t=100µs） IFSM
60
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
(*1) Mounted on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
0.4
Reverse current
I_R
-
ESD break down voltage ESD
20
Typ. Max.
0.5 0.55
7.00 50
-
-
Unit
Conditions
V
I_F=1.0A
µA
V_R=60V
kV C=100pF,R=1.5kΩ, forward and reverse : 1 times
Rev.B
1/3