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| RB098BM100 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RB098BM100
ï¬Applications
General rectification
ï¬Dimensions (Unit : mm)
Datasheet
ï¬Land size figure (Unit : mm)
6.0
ï¬Features
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Super low IR
ï¬Construction
Silicon epitaxial planar type
1
2
1.6
1.6
TO-252
2.3 2.3
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
ï¬Structure
Cathode
ï¬Taping specifications (Unit : mm)
Anode Anode
ï¬Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
Io
Non-repetitive forward current surge peak IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
ï¬Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
VF
IR
Rth(j-c)
Conditions
Dutyâ¦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=120ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
-
Limits Unit
110
V
100
V
6
A
100
A
150
°C
ï55 to ï«150 °C
Conditions
IF=3A
VR=100V
Junction to case
Min. Typ. Max. Unit
-
- 0.77 V
-
-
3 ïA
-
-
6 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C
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