RB098BM-60 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB098BM-60
lApplication
Switching power supply
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Super low I_R
lConstruction
Silicon epitaxial planar type
1
2
1.6
1.6
TO-252
2.3 2.3
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
lStructure
Cathode
lTaping specifications (Unit : mm)
Anode Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
60
V
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Direct reverse voltage
60Hz half sin wave, resistive load,
I_O/2 per diode, T_c=120ºC Max.
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle, per diode
-
60
V
6
A
50
A
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical and Thermal Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=3A
-
- 0.83 V
Reverse current
I_R
V_R=60V
-
- 1.5 mA
Thermal resistance
R_th(j-c)
Junction to case
-
-
6 °C/W
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2016.04 - Rev.B