RB095B-60_09 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB095B-60
zApplications
General rectification
zDimensions(Unit : mm)
zLand size figure(Unit : mm)
6.0
zFeatures
1) Power mold type. (CPD3)
2) Low V_F
3) High reliability
zConstruction
Silicon epitaxial planar
1.6
1.6
CPD 2.3 2.3
zStructure
(2)
zTaping dimensions(Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
(1) (3)
φ1.55±0.1
　　　　　 0
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.0±0.1
2.7±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
60
V
Reverse voltage (DC)
V_R
60
V
Average rectified forward current (*1)
Io
6
A
Forward current surge peak(60Hz・1cyc)(*1)
I_FSM
45
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=112°C
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
V_F
-
- 0.58
I_R
-
-
300
θjc
-
-
6.0
Unit
V
µA
°C/W
Conditions
I_F=3.0A
V_R=60V
junction to case
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2009.11 - Rev.G