RB088T100 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB088T100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low I_R
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±^00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±^00..21
lStructure
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±_00..015
ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3)
Anode Cathode Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
110
V
Reverse voltage
V_R
Direct reverse voltage
100
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, I_O/2 per diode, T_c=137ºC Max.
10
A
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, Non-repetitive at
T_a=25ºC, 1cycle, per diode
100
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical and Thermal Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Forward voltage
V_F
I_F=5A
Reverse current
I_R
V_R=100V
Thermal resistance
R_th(j-c)
Junction to case
Min. Typ. Max. Unit
-
- 0.87 V
-
-
5 mA
-
-
2 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A