RB088T-30NZ Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB088T-30NZ
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low I_R
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±^00..31
10.0±^00..31
f3.2±0.2
2.8±^00..21
lStructure
1
1.2
1.3
0.8
2.6±0.5
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±_00..015
ROHM : TO220FN
1 _{: Manufacture date}
lPackage Dimensions (Unit : mm)
7
540
(1)
(2)
(3)
Anode Cathode Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Storage temperature
T_stg
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
I_O/2 per diode, T_c=130ºC Max.
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle, per diode
-
-
Limits Unit
35
V
30
V
10
A
50
A
150
°C
-55 to +150 °C
lElectrical and Thermal Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Forward voltage
V_F
I_F=5A
Reverse current
I_R
V_R=30V
Thermal resistance
R_th(j-c)
Junction to case
Min. Typ. Max. Unit
-
- 0.72 V
-
-
3 mA
-
-
2 °C/W
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2016.09 - Rev.A