RB088NS150 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB088NS150
Datasheet
lApplication
Switching power supply
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
lFeatures
1) Cathode common dual type
2) Low I_R
3) High reliability
4) AEC-Q101 qualified
RB088
NS150
1
LPDS
lStructure
Cathode
lConstruction
Silicon epitaxial planar
ROHM : LPDS
JEITA : TO263S
1 Manufactuare Year, Week and Day
lTaping specifications (Unit : mm)
Anode Anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
V_RM
150
Reverse voltage (DC)
V_R
150
Average rectified forward current (*1)
Io
10
Forward current surge peak (60Hz・1cyc) (*2) I_FSM
50
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
(*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave
(*2) Per Diode.
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
- 0.78 0.88
Reverse current
I_R
-
-
15
Thermal resistance
Rth(j-c) -
-
2
Unit
V
V
A
A
°C
°C
Unit
V
mA
°C/W
Conditions
I_F=5.0A
V_R=150V
junction to case
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2013.06 - Rev.B