RB088B150FH Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB088B150
lApplications
Switching power supply
lFeatures
1)Cathode common dual type
2)Low IR
3)High reliability
4)AEC-Q101 qualified
lConstruction
Silicon epitaxial
lExternal Dimensions(Unit : mm)
C0.5
6.5±0.2
5.1±0.2
0.1
2.3±0.2
0.1
0.5±0.1
lLand Size Figure(Unit : mm)
6.0
1
0.9
(1) (2) (3)
0.75
0.65±0.1
2.3±0.2 2.3±0.2
ROHM : CPD
JEITA : SC-63
1 _Manufacture
0.5±0.1
1.0±0.2
1.6
1.6
CPD 2.3 2.3
lStructure
lTaping Dimensions(Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
φ 1.55±0.1
　　　　　 0
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ 3.0±0.1
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
150
V
Reverse voltage (DC)
V_R
150
V
Average rectified forward current (*1)
Io
10
A
Forward current surge peak (60Hz・1cyc)(*2)
I_FSM
50
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
(*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave
(*2) Per Diode.
lElectrical Characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Forward voltage
V_F
-
0.78 0.88
V
Reverse current
I_R
-
-
15
mA
2.7±0.2
Conditions
I_F=5.0A
V_R=150V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A