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RB085T-60NZ Datasheet, PDF (1/7 Pages) Rohm – Schottky barrier diode | |||
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Schottky barrier diode
RB085T-60NZ
ï¬Applications
Switching power supply
ï¬Dimensions (Unit : mm)
ï¬Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
ï¬Construction
Silicon epitaxial planer
Data Sheet
ï¬Structure
(1) (2) (3)
âPacking Dimensions (Unit : mm)
7
540
34.5
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
60
VR
60
Io
10
Forward current surge peak (60Hz / 1cyc) (*1)
IFSM
100
Junction temperature
Tj
150
Storage temperature
Tstg
ï40 to ï«150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130ï°C
ï¬Electrical characteristic (Ta=25ï°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF
-
- 0.58
IR
-
-
300
ï±jc
-
-
2.5
Unit
V
V
A
A
ï°C
ï°C
Unit
V
ïA
ï°C/W
Conditions
IF=5A
VR=60V
junction to case
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© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.09 - Rev.A
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