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RB085T-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode
Schottky barrier diode
RB085T-40
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
8
Construction
Silicon epitaxial planer
Data Sheet
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
45
VR
40
Io
10
Forward current surge peak (60Hz / 1cyc) (*1)
IFSM
100
Junction temperature
Tj
150
Storage temperature
Tstg
40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF
-
-
0.55
IR
-
-
200
jc
-
-
2.5
Unit
V
V
A
A
C
C
Unit
V
A
C/W
Conditions
IF=5A
VR=40V
junction to case
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2011.04 - Rev.D