RB085B-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB085B-40
zApplications
General rectification
z Dimensions (Unit : mm)
zFeatures
1) Power mold type. (CPD)
2) Low V_F
3) High reliability
zConstruction
Silicon epitaxial planar
zLand size figure (Unit : mm)
6.0
1.6 1.6
CPD 2.3 2.3
zStructure
(2)
zTaping dimensions (Unit : mm)
(1) (3)
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
45
V
Reverse voltag (DC)
V_R
40
V
Average rectified forward current(*1)
Io
10
A
Forward current surge peak(60Hz / 1cyc) I_FSM
45
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
(*1) Rating of per diode : Io/2
z Electrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F
-
- 0.55
I_R
-
-
200
Thermal impedance
θjc
-
-
6.0
Unit
V
µA
°C/W
Conditions
I_F=5.0A
V_R=40V
junction to case
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2009.11 - Rev.A