RB085B-30TL Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB085B-30
Applications
General rectification
Features
1)Power mold type.(CPD)
2)Low V_F
3)High reliability
Dimensions(Unit : mm)
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Construction
Silicon epitaxial planar
Data Sheet
Land size figure(Unit : mm)
6.0
1.6 1.6
CPD _{2.3 2.3}
Structure
(2)
(1) (3)
Taping specifications(Unit : mm)
Absolute maximum ratings(Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
V_RM
35
V_R
30
Io
10
Forward current surge peak (60Hz / 1cyc)(*1)
I_FSM
35
Junction temperature
Tj
150
Storage temperature
Tstg
40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=105°C
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
V_F
-
-
0.48
I_R
-
-
300
jc
-
-
6.0
Unit
V
V
A
A
C
C
Unit
V
A
C/W
Conditions
I_F=4.0A
V_R=30V
junction to case
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2011.04 - Rev.E