RB081L-20_11 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode

Data Sheet
Shottky barrier diode
RB081L-20
Applications
General rectification
Dimensions (Unit : mm)
Features
1) Small power mold type. (PMDS)
2) Low V_F, Low I_R.
3) High reliability.
Construction
Silicon epitaxial planar
2.6±0.2
39
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacuture Date
Land size figure (Unit : mm)
2.0
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55 ±0.05
0.3
2.9±0.1
4.0±0 .1
φ1.55
2 .8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
25
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current (*1)
Io
5
A
Forward current surge peak (60Hz・1cyc)
I_FSM
70
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.45
I_R
-
-
700
Unit
Conditions
V
I_F=5.0A
μA
V_R=20V
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2011.04 - Rev.B