RB081L-20 Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB081L-20
RB081L-20
zApplications
High frequency rectification
For switching power supply
zFeatures
1) Compact power mold type. (PMDS)
2) Ultra low VF.( VF=0.27V Typ. at 1A )
3) IO=5A guaranteed despite the size.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Units : mm)
1.5±0.2
CATHODE MARK
39
2.6±0.2
ROHM : PMDS
EIAJ : −
JEDEC : SOD-106
0.1
+0.02
−0.1
2.0±0.2
Date of manufacture EX. 1999.12 → 9,C
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
25
V
DC reverse voltage
VR
20
V
IO1 ^∗1
5
A
Mean rectifying current
IO2 ^∗2
4
A
Peak forward surge current
IFSM
70
A
(60Hz 1 )
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
−40∼+125
˚C
∗1 When mounted on an alumina substrates (82×30×1.0mm), Tc Max.=90˚C
∗2 When mounted on an alumina substrates (82×30×1.0mm), Ta=25˚C
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Typ.
−
−
Max.
0.45
0.7
Unit
Conditions
V
IF=5.0A
mA
VR=20V