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RB078BM30SFH Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode
Schottky Barrier Diode
RB078BM30SFH
Application
General Rectification
Dimensions (Unit : mm)
Datasheet
AEC-Q101 Qualified
Land size figure (Unit : mm)
6.0
Features
1) Power mold type (TO-252)
1
2) High reliability
3) Low VF
Construction
Silicon epitaxial planar type
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
Taping specifications (Unit : mm)
1.6
1.6
TO-252
2.3 2.3
Structure
(2)
Cathode
(1)
(3)
Open Anode
Absolute maximum ratings (Tc= 25°C)
Parameter
Symbol Limits Unit
Conditions
Repetitive Peak Reverse Voltage
VRM
30
V Duty≦0.5
Reverse Voltage
VR
Average forward rectified current
Io
Non-repetitive Forward Current Surge Peak IFSM
Operating Junction Temperature
Tj
30
V Direct Reverse Voltage
5
50
150
A
60Hz half sin Wave resistive load,
Tc=126°C max.
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC
°C
-
Storage Temperature
Tstg 55 to 150 °C
-
Electrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max. Unit
Conditions
VF
- - 0.72 V IF=5.0A
IR
-
-
5 A VR=30V
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2015.08 - Rev.A