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| RB068L100_16 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RB068L100
ï¬Application
General rectification
ï¬Dimensions (Unit : mm)
2.6±0.15
Datasheet
ï¬Land Size Figure (Unit : mm)
2.0
ï¬Features
1) Small power mold type
(PMDS)
2) High reliability
3) Super low IR
ï¬Construction
Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1
2 Manufacture Date
ï¬Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
ï¬Structure
Cathode
ï¦Ï1.15.55ï±5±0.005.05
Anode
0.3
2.9±0.1
4.0±0.1
ï¦Ï1.51.555
2.8MAX
ï¬Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Reverse Voltage
VR
Average Forward Rectified Current Io
Non-repetitive Forward Current Surge Peak IFSM
Operating Junction Temperature
Tj
Storage Temperature
Tstg
Dutyâ¦0.5
100
V
Direct Reverse Voltage
100
V
Glass epoxi mounted, 60Hz half sin Wave
resistive load, Tc=83°C max.
2
A
60Hz half sin wave ,one cycle,
non-repetitive at Ta=25°C
110
A
-
150
°C
-
ï40 to ï«150 °C
ï¬Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=2.0A
VR=100V
Min. Typ. Max. Unit
-
- 0.79 V
-
-
3 ïA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.D
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