RB068L-60_16 Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB068L-60
Applications
General rectification
 External Dimensions(Unit : mm)
2.6±0.2
Features
1)Small power mold type.(PMDS)
2)High reliability
Construction
Silicon epitaxial
95
12
0.1±0.02
　　　 0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1
2 _{Manufacture Date}
Datasheet
Land Size Figure(Unit : mm)
2.0
PMDS
Structure
Taping Dimensions(Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
Absolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
Reverse voltage (DC)
V_RM
60
V
V_R
60
V
Average rectified forward current (*1)
Io
2
A
Forward current surge peak (60Hz・1cyc)
I_FSM
90
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
(*1)Mounting on epoxi board. 180°Half sine wave
Electrical Characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Forward voltage
Reverse current
V_F

 0.68
V
I_R


2.0
A
2.8MAX
Conditions
I_F=2.0A
V_R=60V
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2016.11 - Rev.B