RB068L-40 Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB068L-40
lApplications
General rectification
lDimensions (Unit : mm)
lFeatures
1)Small power mold type. (PMDS)
2)Ultra Low I_R
3)High reliability
lStructure
Silicon epitaxial planer
2.6±0.2
27
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② _{dot (year week factory)}
lTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
Data Sheet
lLand size figure (Unit : mm)
2.0
PMDS
lStructure
φ 1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ 1.55
2.8MAX
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current (*1)
Io
2
A
Forward current surge peak (60Hz・1cyc)
I_FSM
40
A
Junction temperature
Tj
125
C
Storage temperature
Tstg
-40 to +150
C
(*1)Mounted on epoxy board. 180°Half sine wave
lElectrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
Reverse current
V_F
-
I_R
-
-
0.69
-
1
Unit
Conditions
V
I_F=2.0A
mA
V_R=40V
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2011.12 - Rev.A