RB061US-30_15 Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB061US-30
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Small power mold type. (TSMD8)
2)Low V_F
3)High reliability
Structure
Silicon epitaxial planer
●
ROHM : TSMD8
Manufacture Date
● 1pin mark
Taping dimensions (Unit : mm)
Data Sheet
Land size figure (Unit : mm)
TSMD8
(8）(7) (6) (5)
Structure
（1）（2（）3）（4）
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
I_FSM
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180° Half sine wave
Limits
30
30
2
8
125
- 40 to +125
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F1
-
V_F2
-
Reverse current
I_R
-
Capacitance between terminal
Ct
-
Reverse recovery time
trr
-
Typ.
0.30
0.35
280
80
-
Max.
0.35
0.40
900
-
20
Unit
V
V
A
A
°C
°C
Unit
Conditions
V
I_F=1.0A
V
I_F=2.0A
μA
V_R=15V
pF
V_R=20V, f=1MHz
ns
I_F=0.5A, I_R=1A, Irr=0.25*I_R
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2011.09 - Rev.A