RB058L150 Datasheet, PDF (1/10 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB058L150
Application
General rectification
Dimensions (Unit : mm)
2.6±0.2
Datasheet
Land size figure (Unit : mm)
2.0
Features
1) Small power mold type. (PMDS)
98
12
2) Ultra low I_R
3) High reliability
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC :SOD-106
1
2 Manufacture Date
PMD2
Structure
Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ11.5.555± 00..0055
cathode
anode
0.3
2.9±0.1
4.0±0.1
φ11..5555
2.8MAX
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
150
V
Reverse voltage (DC)
V_R
150
V
Average rectified forward current (*1)
Io
3
A
Forward current surge peak (60Hz・1cyc) I_FSM
90
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
(*1) Mounting on epoxi board. 180°Half sine wave
Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
V_F
-
- 0.85
V
Reverse current
I_R
-
-
3.0
A
Conditions
I_F=3.0A
V_R=150V
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2016.11 - Rev.B