English
Language : 

RB058L-30 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode
Schottky Barrier Diode
RB058L-30
Application
General rectification
Dimensions (Unit : mm)
2.6±0.15
Datasheet
Land Size Figure (Unit : mm)
2.0
Features
1) Small power mold type
(PMDS)
2) High reliability
3) Super low IR
12
1.5±0.2
0.1±0.02
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1
2 : Manufacture Date
Construction
Taping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
PMDS
Structure
φ1.55±0.05
Cathode
Anode
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30
V
Reverse voltage
VR
Direct reverse voltage
30
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=90ºC Max.
3
A
Non-repetitive forward current surge peak IFSM
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
90
A
Operating junction temperature
Tj
-
150
°C
Storage temperature
Tstg
-
55 to 150 °C
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=3.0A
VR=30V
Min. Typ. Max. Unit
-
- 0.68 V
-
- 2.5 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C