RB056L-40_15 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB056L-40
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Low I_R
lConstruction
Silicon epitaxial planar type
1
2
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1
2 _{Manufacture Date}
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
lStructure
Cathode
φf1..5555±00.0.055
Anode
0.3
2.9±0.1
4.0±0.1
fφ1.15.555
2.8MAX
lAbsolure Maximum Ratings (T_c = 25°C)
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage
V_RM
Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
V_R
I_o
I_FSM
T_j
Direct Reverse Voltage
Glass epoxi mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, one cycle,
non-repetitive at T_j=25ºC
-
Storage Temperature
T_stg
-
Limits Unit
40
V
40
V
3
A
70
A
150
°C
-40 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Symbol
V_F1
Forward voltage
V_F2
Reverse current
I_R
Conditions
I_F=2.0A
I_F=3.0A
V_R=40V
Min. Typ. Max. Unit
- - 0.58 V
- - 0.67 V
- - 50 mA
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2014.06 - Rev.C