RB056L-40TF Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB056L-40TF
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Small power mold type.(PMDS)
2)Low I_R
3)High reliability
Construction
Silicon epitaxial planer
AEC-Q101 Qualified
Land size figure(Unit : mm)
2.0
PMDS
Structure
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz / 1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. (Tc=63CMAX.)
Limits
40
40
3
70
150
-40to+150
Electrical characteristics(Ta=25℃)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F1
-
- 0.67
V_F2
-
- 0.58
I_R
-
-
50
Unit
V
V
A
A
C
C
Unit
Conditions
V
I_F=3.0A
V
I_F=2.0A
A
V_R=40V
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2010.08 - Rev.B