RB055LA-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB055LA-40
RB055LA-40
zApplications
General rectification
zFeatures
1) Small power mold type
(PMDT)
2) Low VF
3) High reliability
zStructure
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.6±0.2
0.2±0.15
　　　 0.1
zLand size figure (Unit : mm)
2.0
1.5±0.2
0.95±0.1
ROHM : PMDï¼´
① ^{Manufacture Date}
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDï¼´
zStructure
φ1.55±0.1
　　　　　 0
0.25±0.05
2.7±0.1
4.0±0.1
φ1.55±0.1
　　　　　 0
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current
Io
3
A
Forward current surge peak （60Hz・1cyc）
I_FSM
70
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
(*1)Tc=80℃max Mounted on epoxy board. 160°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F1
-
- 0.55
V_F2
-
- 0.62
Reverse current
I_R
-
-
100
Unit
Conditions
V
I_F=1.5A
V
I_F=3.0A
µA
V_R=40V
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