RB055L-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB055L-40
Applications
General rectification
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
Features
1)Small power mold type.（PMDS）
2)Low I_R
3)High reliability
Construction
Silicon epitaxial planar
52
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② _{Manufacture Date}
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55 ±0.05
0.3
2.9±0.1
4.0±0 .1
φ1.55
2 .8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forwarfd current
Io
3
A
Forward current surge peak （60Hz・1cyc） I_FSM
40
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
40 to 150
°C
(*1) Mounted on epoxyboard. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
0.65
Reverse current
I_R
-
-
0.5
Unit
Conditions
V
I_F=3.0A
mA
V_R=40V
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2011.04 - Rev.A