RB055L-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB055L-40
RB055L-40
zApplications
General rectification
zFeatures
1) Small power mold type
(PMDS)
2) Low IR
3) High reliability
zStructure
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.6±0.2
zLand size figure (Unit : mm)
2.0
52
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
PMDS
zStructure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current
Io
3
A
Forward current surge peak （60Hz・1cyc） I_FSM
40
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1) Mounted on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Forward voltagae
V_F
-
Reverse current
I_R
-
Typ. Max.
- 0.65
-
0.5
Unit
Conditions
V
I_F=3.0A
mA V_R=40V
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