RB055L-30_15 Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB055L-30
lApplications
General rectification
lDimensions (Unit : mm)
2.6±0.2
lFeatures
1)Small power mold type. (PMDS)
2)High reliability
3)Low V_F
lConstruction
Silicon epitaxial planer
45
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
① ② _{Manufacture Date}
lTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
Data Sheet
lLand size figure (Unit : mm)
2.0
PMDS
lStructure
φ 1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ 1.55
2.8MAX
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive peak) V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
I_FSM
Tj
Storage temperature
Tstg
(*1) Mounted on Alumina board, Tc=110°C MAX.
Limits
30
30
3
55
150
-55 to +150
lElectrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltagae
V_F
-
-
0.55
Reverse current
I_R
-
-
50
Unit
V
V
A
A
C
C
Unit
Conditions
V
I_F=3.0A
μA
V_R=30V
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2011.10 - Rev.A