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RB051M-2Y_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RB051M-2Y
ï¬Applications
General rectification
ï¬Dimensions(Unit : mm)
ï¬Features
1)Small power mold type.ï¼PMDUï¼
2)Ultra Low VF
3)High reliability
ï¬Construction
Silicon epitaxial planer
ï¬Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05
Ï1.55±0.05
ï ï¬Land size figure(Unit : mm)
1.2
PMDU
ï¬Structure
0.25±0.05
1.81±0.1
4.0±0.1
Ï1.0±0.1
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Reverse voltage (repetitive)
VRM
Reverse voltage (DC)
VR
Average rectified forward current(*1)
Io
Forward current surge peak ï¼60Hzã»1cycï¼
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on alumina board. Tc=95ï°CãMax.
Limits
20
20
3
30
125
-40 to +125
1.5MAX
Unit
V
V
A
A
ï°C
ï°C
ï¬Electrical characteristics(Ta=25ï°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF
-
- 0.46
IR
-
-
0.9
Unit
Conditions
V
IF=3A
mA VR=20V
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©2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.C
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